Texas Instruments Expands GaN Semiconductor Production, Boosting Capacity Fourfold!

Texas Instruments (TI) has announced a significant expansion in its gallium nitride (GaN)-based power semiconductor production with the launch of a new factory in Aizu, Japan. This strategic move, in addition to its existing facility in Dallas, Texas, will quadruple TI’s internal manufacturing capacity for GaN semiconductors, solidifying the company’s leadership in the semiconductor market.

With over a decade of expertise in GaN chip design and manufacturing, TI has successfully qualified its 200mm GaN technology for mass production. This qualification is expected to increase internal manufacturing to over 95 percent by 2030, positioning TI at the forefront of GaN semiconductor innovation and production efficiency.

TI’s GaN semiconductors are engineered to deliver energy-efficient and reliable performance in compact sizes, making them ideal for a wide range of applications, including laptop power adapters, energy-efficient motors, and other high-performance electronic devices. The advanced GaN manufacturing technology employed at the new Aizu facility not only enhances product performance and manufacturing efficiency but also provides cost advantages and environmental benefits through reduced resource usage.

In addition to expanding production capacity, TI is preparing to scale its GaN chips to higher voltages, addressing the growing market demand for energy-efficient solutions. This initiative is a key component of TI’s commitment to sustainable manufacturing, with ambitious goals to achieve 100 percent renewable electricity in its U.S. operations by 2027 and globally by 2030.

Vikrampati Singhania, AMF Director and Managing Director of JK Fenner (India), hailed the partnership as a major opportunity for the Indian auto sector, noting that Fraunhofer’s advanced research expertise will aid in creating high-quality, sustainable auto solutions. AMF Secretary Vinnie Mehta also underscored the collaboration’s potential to uplift India’s R&D capabilities, giving companies the tools to meet global standards through cost-effective innovation.

Dr. Johann Feckl, Director of Precompetitive Research at Fraunhofer, highlighted the mutual strengths in mobility expertise and manufacturing between Germany and India. Anandi Iyer, Director of Fraunhofer Office India, echoed this sentiment, noting Fraunhofer’s 16-year collaboration with India’s automotive industry and emphasizing the potential to develop India-specific solutions that integrate German engineering with Indian innovation for shared progress.

This partnership between AMF and Fraunhofer-Gesellschaft is poised to significantly impact India’s automotive sector by fostering a robust environment for sustainable and innovative auto component manufacturing. By leveraging Fraunhofer’s global research capabilities and AMF’s deep industry insights, the collaboration aims to address current challenges and drive forward-thinking solutions that benefit both the industry and society at large.